P. Hashemi, T. Ando, K. Balakrishnan, J. Bruley, S. Engelmann, J. A. Ott, V. Narayanan, D.-G. Park, R. T. Mo, E. Leobandung. High-mobility high-Ge-content Si1-xGex-OI PMOS FinFETs with fins formed using 3D germanium condensation with Ge fraction up to x∼ 0.7, scaled EOT∼8.5Å and ∼10nm fin width. In Symposium on VLSI Circuits, VLSIC 2015, Kyoto, Japan, June 17-19, 2015. pages 16, IEEE, 2015. [doi]
Abstract is missing.