2/Ge Structure by Insertion of Ta Oxide Layer

Kuniaki Hashimoto, Akio Ohta, Hideki Murakami, Seiichiro Higashi, Seiichi Miyazaki. 2/Ge Structure by Insertion of Ta Oxide Layer. IEICE Transactions, 96-C(5):674-679, 2013. [doi]

@article{HashimotoOMHM13,
  title = {2/Ge Structure by Insertion of Ta Oxide Layer},
  author = {Kuniaki Hashimoto and Akio Ohta and Hideki Murakami and Seiichiro Higashi and Seiichi Miyazaki},
  year = {2013},
  url = {http://search.ieice.org/bin/summary.php?id=e96-c_5_674},
  researchr = {https://researchr.org/publication/HashimotoOMHM13},
  cites = {0},
  citedby = {0},
  journal = {IEICE Transactions},
  volume = {96-C},
  number = {5},
  pages = {674-679},
}