S. F. Wan Muhamad Hatta, N. Soin, D. Abd Hadi, J. F. Zhang. NBTI degradation effect on advanced-process 45 nm high-k PMOSFETs with geometric and process variations. Microelectronics Reliability, 50(9-11):1283-1289, 2010. [doi]
@article{HattaSHZ10,
title = {NBTI degradation effect on advanced-process 45 nm high-k PMOSFETs with geometric and process variations},
author = {S. F. Wan Muhamad Hatta and N. Soin and D. Abd Hadi and J. F. Zhang},
year = {2010},
doi = {10.1016/j.microrel.2010.07.022},
url = {http://dx.doi.org/10.1016/j.microrel.2010.07.022},
researchr = {https://researchr.org/publication/HattaSHZ10},
cites = {0},
citedby = {0},
journal = {Microelectronics Reliability},
volume = {50},
number = {9-11},
pages = {1283-1289},
}