NBTI degradation effect on advanced-process 45 nm high-k PMOSFETs with geometric and process variations

S. F. Wan Muhamad Hatta, N. Soin, D. Abd Hadi, J. F. Zhang. NBTI degradation effect on advanced-process 45 nm high-k PMOSFETs with geometric and process variations. Microelectronics Reliability, 50(9-11):1283-1289, 2010. [doi]

Abstract

Abstract is missing.