Long Term Drift Observed in ISFET Due to the Penetration of H+ Ions into the Oxide Layer

Chinmayee Hazarika, Sujan Neroula, Santanu Sharma. Long Term Drift Observed in ISFET Due to the Penetration of H+ Ions into the Oxide Layer. In Bhabesh Deka, Pradipta Maji, Sushmita Mitra, Dhruba Kumar Bhattacharyya, Prabin Kumar Bora, Sankar Kumar Pal, editors, Pattern Recognition and Machine Intelligence - 8th International Conference, PReMI 2019, Tezpur, India, December 17-20, 2019, Proceedings, Part II. Volume 11942 of Lecture Notes in Computer Science, pages 543-553, Springer, 2019. [doi]

@inproceedings{HazarikaNS19,
  title = {Long Term Drift Observed in ISFET Due to the Penetration of H+ Ions into the Oxide Layer},
  author = {Chinmayee Hazarika and Sujan Neroula and Santanu Sharma},
  year = {2019},
  doi = {10.1007/978-3-030-34872-4_60},
  url = {https://doi.org/10.1007/978-3-030-34872-4_60},
  researchr = {https://researchr.org/publication/HazarikaNS19},
  cites = {0},
  citedby = {0},
  pages = {543-553},
  booktitle = {Pattern Recognition and Machine Intelligence - 8th International Conference, PReMI 2019, Tezpur, India, December 17-20, 2019, Proceedings, Part II},
  editor = {Bhabesh Deka and Pradipta Maji and Sushmita Mitra and Dhruba Kumar Bhattacharyya and Prabin Kumar Bora and Sankar Kumar Pal},
  volume = {11942},
  series = {Lecture Notes in Computer Science},
  publisher = {Springer},
  isbn = {978-3-030-34872-4},
}