Comparison of heavy-ion induced SEU for D- and TMR-flip-flop designs in 65-nm bulk CMOS technology

Yibai He, Shuming Chen. Comparison of heavy-ion induced SEU for D- and TMR-flip-flop designs in 65-nm bulk CMOS technology. Science in China Series F: Information Sciences, 57(10):1-7, 2014. [doi]

@article{HeC14-2,
  title = {Comparison of heavy-ion induced SEU for D- and TMR-flip-flop designs in 65-nm bulk CMOS technology},
  author = {Yibai He and Shuming Chen},
  year = {2014},
  doi = {10.1007/s11432-014-5100-1},
  url = {http://dx.doi.org/10.1007/s11432-014-5100-1},
  researchr = {https://researchr.org/publication/HeC14-2},
  cites = {0},
  citedby = {0},
  journal = {Science in China Series F: Information Sciences},
  volume = {57},
  number = {10},
  pages = {1-7},
}