A gate Modulated avalanche bipolar transistor in 130nm CMOS technology

Robert K. Henderson, Eric A. G. Webster, Richard J. Walker. A gate Modulated avalanche bipolar transistor in 130nm CMOS technology. In Proceedings of the 2012 European Solid-State Device Research Conference, ESSDERC 2012, Bordeaux, France, September 17-21, 2012. pages 226-229, IEEE, 2012. [doi]

Abstract

Abstract is missing.