Alfonso Herrera-Moreno, Jose Luis Garcia-Gervacio, Héctor Villacorta-Minaya, Héctor Vázquez-Leal. TCAD analysis and modeling for NBTI mechanism in FinFET transistors. IEICE Electronic Express, 15(14):20180502, 2018. [doi]
@article{Herrera-MorenoG18, title = {TCAD analysis and modeling for NBTI mechanism in FinFET transistors}, author = {Alfonso Herrera-Moreno and Jose Luis Garcia-Gervacio and Héctor Villacorta-Minaya and Héctor Vázquez-Leal}, year = {2018}, doi = {10.1587/elex.15.20180502}, url = {https://doi.org/10.1587/elex.15.20180502}, researchr = {https://researchr.org/publication/Herrera-MorenoG18}, cites = {0}, citedby = {0}, journal = {IEICE Electronic Express}, volume = {15}, number = {14}, pages = {20180502}, }