Design Procedure for Two-Stage CMOS Opamp using gm/ID design Methodology in 16 nm FinFET Technology

Bakr Hesham, El-Sayed A. M. Hasaneen, Hesham F. A. Hamed. Design Procedure for Two-Stage CMOS Opamp using gm/ID design Methodology in 16 nm FinFET Technology. In 31st International Conference on Microelectronics, ICM 2019, Cairo, Egypt, December 15-18, 2019. pages 325-329, IEEE, 2019. [doi]

Abstract

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