Recent Advances in Ga2O3 MOSFET Technologies

Masataka Higashiwaki, Man Hoi Wong, Takafumi Kamimura, Yoshiaki Nakata, Chia-Hung Lin, Ravikiran Lingaparthi, Akinori Takeyama, Takahiro Makino, Takeshi Ohshima, Naoki Hatta, Kuniaki Yagi, Ken Goto, Kohei Sasaki, Shinya Watanabe, Akito Kuramata, Shigenobu Yamakoshi, Keita Konishi, Hisashi Murakami, Yoshinao Kumagai. Recent Advances in Ga2O3 MOSFET Technologies. In 76th Device Research Conference, DRC 2018, Santa Barbara, CA, USA, June 24-27, 2018. pages 1, IEEE, 2018. [doi]

@inproceedings{HigashiwakiWKNL18,
  title = {Recent Advances in Ga2O3 MOSFET Technologies},
  author = {Masataka Higashiwaki and Man Hoi Wong and Takafumi Kamimura and Yoshiaki Nakata and Chia-Hung Lin and Ravikiran Lingaparthi and Akinori Takeyama and Takahiro Makino and Takeshi Ohshima and Naoki Hatta and Kuniaki Yagi and Ken Goto and Kohei Sasaki and Shinya Watanabe and Akito Kuramata and Shigenobu Yamakoshi and Keita Konishi and Hisashi Murakami and Yoshinao Kumagai},
  year = {2018},
  doi = {10.1109/DRC.2018.8442156},
  url = {https://doi.org/10.1109/DRC.2018.8442156},
  researchr = {https://researchr.org/publication/HigashiwakiWKNL18},
  cites = {0},
  citedby = {0},
  pages = {1},
  booktitle = {76th Device Research Conference, DRC 2018, Santa Barbara, CA, USA, June 24-27, 2018},
  publisher = {IEEE},
  isbn = {978-1-5386-3028-0},
}