Oliver Hilt, Frank Brunner, Eldad Bahat-Treidel, Mihaela Wolf, Joachim Würfl. GaN-channel HEMTs with AlN buffer for high-voltage switching. In Device Research Conference, DRC 2021, Santa Barbara, CA, USA, June 20-23, 2021. pages 1-2, IEEE, 2021. [doi]
@inproceedings{HiltBTWW21,
title = {GaN-channel HEMTs with AlN buffer for high-voltage switching},
author = {Oliver Hilt and Frank Brunner and Eldad Bahat-Treidel and Mihaela Wolf and Joachim Würfl},
year = {2021},
doi = {10.1109/DRC52342.2021.9467164},
url = {https://doi.org/10.1109/DRC52342.2021.9467164},
researchr = {https://researchr.org/publication/HiltBTWW21},
cites = {0},
citedby = {0},
pages = {1-2},
booktitle = {Device Research Conference, DRC 2021, Santa Barbara, CA, USA, June 20-23, 2021},
publisher = {IEEE},
isbn = {978-1-6654-1240-7},
}