Toshiro Hiramoto, Toshiharu Nagumo, Tetsu Ohtou, Kouki Yokoyama. Device Design of Nanoscale MOSFETs Considering the Suppression of Short Channel Effects and Characteristics Variations. IEICE Transactions, 90-C(4):836-841, 2007. [doi]
@article{HiramotoNOY07,
title = {Device Design of Nanoscale MOSFETs Considering the Suppression of Short Channel Effects and Characteristics Variations},
author = {Toshiro Hiramoto and Toshiharu Nagumo and Tetsu Ohtou and Kouki Yokoyama},
year = {2007},
doi = {10.1093/ietele/e90-c.4.836},
url = {http://dx.doi.org/10.1093/ietele/e90-c.4.836},
tags = {design},
researchr = {https://researchr.org/publication/HiramotoNOY07},
cites = {0},
citedby = {0},
journal = {IEICE Transactions},
volume = {90-C},
number = {4},
pages = {836-841},
}