A Circuit-Level Analytical Study on Switching Behaviors of SiC Diode at Basic Cell for Power Converters - researchr publication authors

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Carl N. M. Ho, Francisco Canales, Antonio Coccia, Matti Laitinen. A Circuit-Level Analytical Study on Switching Behaviors of SiC Diode at Basic Cell for Power Converters. In Industry Applications Society Annual Meeting, IAS 2008, Edmonton, Alberta, Canada, 5-9 Octobert, 2008. pages 1-8, IEEE, 2008. [doi]

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