Carl N. M. Ho, Francisco Canales, Antonio Coccia, Matti Laitinen. A Circuit-Level Analytical Study on Switching Behaviors of SiC Diode at Basic Cell for Power Converters. In Industry Applications Society Annual Meeting, IAS 2008, Edmonton, Alberta, Canada, 5-9 Octobert, 2008. pages 1-8, IEEE, 2008. [doi]
@inproceedings{HoCCL08,
title = {A Circuit-Level Analytical Study on Switching Behaviors of SiC Diode at Basic Cell for Power Converters},
author = {Carl N. M. Ho and Francisco Canales and Antonio Coccia and Matti Laitinen},
year = {2008},
doi = {10.1109/08IAS.2008.367},
url = {http://dx.doi.org/10.1109/08IAS.2008.367},
researchr = {https://researchr.org/publication/HoCCL08},
cites = {0},
citedby = {0},
pages = {1-8},
booktitle = {Industry Applications Society Annual Meeting, IAS 2008, Edmonton, Alberta, Canada, 5-9 Octobert, 2008},
publisher = {IEEE},
isbn = {978-1-4244-2278-4},
}