An 8-Gb GDDR6X DRAM Achieving 22 Gb/s/pin With Single-Ended PAM-4 Signaling

Timothy M. Hollis, Ronny Schneider, Martin Brox, Thomas Hein, Wolfgang Spirkl, Martin Bach, Mani Balakrishnan, Stefan Dietrich, Fabien Funfrock, Milena Ivanov, Natalija Jovanovic, Maksim Kuzmenka, Daniel Lauber, Juan Ocon Garrido, David Ovard, Karl Pfefferl, Sven Piatkowski, Gabriele Piscopo, Manfred Plan, Jens Polney, Jan Pottgiesser, Stephan Rau, Filippo Vitale, Marc Walter, Marcos Alvarez Gonzalez, Cristian Chetreanu, Andrea Sorrentino, Jörg Weller, Peter Mayer, Michael Richter 0003, Casto Salobrena Garcia, Andreas Schneider, Shih Nern Wong. An 8-Gb GDDR6X DRAM Achieving 22 Gb/s/pin With Single-Ended PAM-4 Signaling. J. Solid-State Circuits, 57(1):224-235, 2022. [doi]

@article{HollisSBHSBBDFI22,
  title = {An 8-Gb GDDR6X DRAM Achieving 22 Gb/s/pin With Single-Ended PAM-4 Signaling},
  author = {Timothy M. Hollis and Ronny Schneider and Martin Brox and Thomas Hein and Wolfgang Spirkl and Martin Bach and Mani Balakrishnan and Stefan Dietrich and Fabien Funfrock and Milena Ivanov and Natalija Jovanovic and Maksim Kuzmenka and Daniel Lauber and Juan Ocon Garrido and David Ovard and Karl Pfefferl and Sven Piatkowski and Gabriele Piscopo and Manfred Plan and Jens Polney and Jan Pottgiesser and Stephan Rau and Filippo Vitale and Marc Walter and Marcos Alvarez Gonzalez and Cristian Chetreanu and Andrea Sorrentino and Jörg Weller and Peter Mayer and Michael Richter 0003 and Casto Salobrena Garcia and Andreas Schneider and Shih Nern Wong},
  year = {2022},
  doi = {10.1109/JSSC.2021.3104093},
  url = {https://doi.org/10.1109/JSSC.2021.3104093},
  researchr = {https://researchr.org/publication/HollisSBHSBBDFI22},
  cites = {0},
  citedby = {0},
  journal = {J. Solid-State Circuits},
  volume = {57},
  number = {1},
  pages = {224-235},
}