Strengthened ESD Reliability of HV nLDMOSs with Embedded Horizontal Schottky Devices

Shi-Zhe Hong, Shen-Li Chen, Sheng-Kai Fan, Po-Lin Lin, Tien-Yu Lan, Yu-Jie Zhou. Strengthened ESD Reliability of HV nLDMOSs with Embedded Horizontal Schottky Devices. In 3rd IEEE International Conference on Knowledge Innovation and Invention, ICKII 2020, Kaohsiung, Taiwan, August 21-23, 2020. pages 78-79, IEEE, 2020. [doi]

@inproceedings{HongCFLLZ20,
  title = {Strengthened ESD Reliability of HV nLDMOSs with Embedded Horizontal Schottky Devices},
  author = {Shi-Zhe Hong and Shen-Li Chen and Sheng-Kai Fan and Po-Lin Lin and Tien-Yu Lan and Yu-Jie Zhou},
  year = {2020},
  doi = {10.1109/ICKII50300.2020.9318957},
  url = {https://doi.org/10.1109/ICKII50300.2020.9318957},
  researchr = {https://researchr.org/publication/HongCFLLZ20},
  cites = {0},
  citedby = {0},
  pages = {78-79},
  booktitle = {3rd IEEE International Conference on Knowledge Innovation and Invention, ICKII 2020, Kaohsiung, Taiwan, August 21-23, 2020},
  publisher = {IEEE},
  isbn = {978-1-7281-9333-5},
}