Plasma process-induced damage on thick (6.8 nm) and thin (3.5 nm) gate oxide: parametric shifts, hot-carrier response, and dielectric integrity degradation - researchr publication

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Terence B. Hook, David Harmon, Chuan Lin. Plasma process-induced damage on thick (6.8 nm) and thin (3.5 nm) gate oxide: parametric shifts, hot-carrier response, and dielectric integrity degradation. Microelectronics Reliability, 41(5):751-765, 2001. [doi]

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