Innovative device source/drain and channel implantation for MOS transistors in ultra low power subthreshold circuit applications - researchr publication authors

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MunEm Hossain, Masud H. Chowdhury. Innovative device source/drain and channel implantation for MOS transistors in ultra low power subthreshold circuit applications. In 14th IEEE International New Circuits and Systems Conference, NEWCAS 2016, Vancouver, BC, Canada, June 26-29, 2016. pages 1-4, IEEE, 2016. [doi]

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