MunEm Hossain, Masud H. Chowdhury. Innovative device source/drain and channel implantation for MOS transistors in ultra low power subthreshold circuit applications. In 14th IEEE International New Circuits and Systems Conference, NEWCAS 2016, Vancouver, BC, Canada, June 26-29, 2016. pages 1-4, IEEE, 2016. [doi]
@inproceedings{HossainC16-0,
title = {Innovative device source/drain and channel implantation for MOS transistors in ultra low power subthreshold circuit applications},
author = {MunEm Hossain and Masud H. Chowdhury},
year = {2016},
doi = {10.1109/NEWCAS.2016.7604747},
url = {http://dx.doi.org/10.1109/NEWCAS.2016.7604747},
researchr = {https://researchr.org/publication/HossainC16-0},
cites = {0},
citedby = {0},
pages = {1-4},
booktitle = {14th IEEE International New Circuits and Systems Conference, NEWCAS 2016, Vancouver, BC, Canada, June 26-29, 2016},
publisher = {IEEE},
isbn = {978-1-4673-8900-6},
}