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Analysis of the gate capacitance measurement technique and its application for the evaluation of hot-carrier degradation in submicrometer MOSFETs

C. T. Hsu, M. M. Lau, Y. T. Yeow. Analysis of the gate capacitance measurement technique and its application for the evaluation of hot-carrier degradation in submicrometer MOSFETs. Microelectronics Reliability, 41(2):201-209, 2001. [doi]

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