Electrical stress effect on RF power characteristics of SiGe hetero-junction bipolar transistors

Sheng-Yi Huang, Kun-Ming Chen, Guo-Wei Huang, Cheng-Chou Hung, Wen-Shiang Liao, Chun-Yen Chang. Electrical stress effect on RF power characteristics of SiGe hetero-junction bipolar transistors. Microelectronics Reliability, 48(2):193-199, 2008. [doi]

Abstract

Abstract is missing.