Ga contamination in silicon by Focused Ion Beam milling: Dynamic model simulation and Atom Probe Tomography experiment

J. Huang, M. Loeffler, W. Moeller, Ehrenfried Zschech. Ga contamination in silicon by Focused Ion Beam milling: Dynamic model simulation and Atom Probe Tomography experiment. Microelectronics Reliability, 64:390-392, 2016. [doi]

Abstract

Abstract is missing.