3/HfON stack as charge-trapping layer

X. D. Huang, P. T. Lai, Johnny K. O. Sin. 3/HfON stack as charge-trapping layer. Microelectronics Reliability, 52(11):2527-2531, 2012. [doi]

Authors

X. D. Huang

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P. T. Lai

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Johnny K. O. Sin

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