P. T. Lai - researchr alias

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Viewing Publication 1 - 27 from 27

2016

2014

2 as dual tunnel layer in Charge-Trapping nonvolatile memoryJ. X. Chen, J. P. Xu, L. Liu, X. D. Huang, P. T. Lai. mr, 54(2):393-396, 2014. [doi]

3 with and without nitridation for nonvolatile memory applicationsX. D. Huang, R. P. Shi, C. H. Leung, P. T. Lai. mr, 54(11):2388-2391, 2014. [doi]

A study on the electrical characteristics of InGaZnO thin-film transistor with HfLaO gate dielectric annealed in different gasesL. X. Qian, P. T. Lai. mr, 54(11):2396-2400, 2014. [doi]

2013

A comparison study on hydrogen sensing performance of Pt/MoO3 nanoplatelets coated with a thin layer of Ta2O5 or La2O3Jerry Yu, Y. Liu, F. X. Cai, Mahnaz Shafiei, Gang Chen, Nunzio Motta, Wojtek Wlodarski, Kourosh Kalantar-Zadeh, P. T. Lai. nems 2013: 191-194 [doi]

2012

3 as gate insulatorGang Chen, Jerry Yu, P. T. Lai. mr, 52(8):1660-1664, 2012. [doi]

3/HfON stack as charge-trapping layerX. D. Huang, P. T. Lai, Johnny K. O. Sin. mr, 52(11):2527-2531, 2012. [doi]

Improved performance of GeON as charge storage layer in flash memory by optimal annealingQ. B. Tao, P. T. Lai. mr, 52(11):2597-2601, 2012. [doi]

2010

A carrier-mobility model for high-k gate-dielectric Ge MOSFETs with metal gate electrodeJ. P. Xu, X. Xiao, P. T. Lai. mr, 50(8):1081-1086, 2010. [doi]

2009

A study on the improved programming characteristics of flash memory with Si::3::N::4::/SiO::2:: stacked tunneling dielectricL. Liu, J. P. Xu, L. L. Chen, P. T. Lai. mr, 49(8):912-915, 2009. [doi]

2008

A fringing-capacitance model for deep-submicron MOSFET with high-k gate dielectricF. Ji, J. P. Xu, P. T. Lai, J. G. Guan. mr, 48(5):693-697, 2008. [doi]

Effects of Ti content and wet-N::2:: anneal on Ge MOS capacitors with HfTiO gate dielectricC. X. Li, X. Zou, P. T. Lai, J. P. Xu, C.-L. Chan. mr, 48(4):526-530, 2008. [doi]

Effects of Insulator Thickness on the Sensing Properties of MISiC Schottky-Diode Hydrogen SensorW. M. Tang, C. H. Leung, P. T. Lai. delta 2008: 171-174 [doi]

Improved sensing characteristics of MISiC Schottky-diode hydrogen sensor by using HfO::2:: as gate insulatorW. M. Tang, C. H. Leung, P. T. Lai. mr, 48(11-12):1780-1785, 2008. [doi]

A 2D threshold-voltage model for small MOSFET with quantum-mechanical effectsJ. P. Xu, Y. P. Li, P. T. Lai, W. B. Chen, S. G. Xu, J. G. Guan. mr, 48(1):23-28, 2008. [doi]

Influence of sidewall spacer on threshold voltage of MOSFET with high-k gate dielectricJ. P. Xu, F. Ji, P. T. Lai, J. G. Guan. mr, 48(2):181-186, 2008. [doi]

2007

Gate leakage properties of MOS devices with tri-layer high-k gate dielectricW. B. Chen, J. P. Xu, P. T. Lai, Y. P. Li, S. G. Xu. mr, 47(6):937-943, 2007. [doi]

A threshold-voltage model of SiGe-channel pMOSFET without Si cap layerX. Zou, J. P. Xu, C. X. Li, P. T. Lai, W. B. Chen. mr, 47(2-3):391-394, 2007. [doi]

2006

Influence of TCE concentration in thermal oxidation on reliability of SiC MOS capacitors under Fowler-Nordheim electron injectionB. L. Yang, Paul C. K. Kwok, P. T. Lai. mr, 46(12):2044-2048, 2006. [doi]

2004

Interfacial properties and reliability of SiO::2:: grown on 6H-SiC in dry O::2:: plus trichloroethyleneP. T. Lai, J. P. Xu, H. P. Wu, C.-L. Chan. mr, 44(4):577-580, 2004. [doi]

Conduction mechanisms in MOS gate dielectric filmsB. L. Yang, P. T. Lai, H. Wong. mr, 44(5):709-718, 2004. [doi]

2003

Enhanced reliability for low-temperature gate dielectric of MOS devices by N::2::O or NO plasma nitridationDavid C. T. Or, P. T. Lai, J. K. O. Sin, Paul C. K. Kwok, J. P. Xu. mr, 43(1):163-166, 2003. [doi]

2002

MOS characteristics of NO-grown oxynitrides on n-type 6H-SiCS. Chakraborty, P. T. Lai, Paul C. K. Kwok. mr, 42(3):455-458, 2002. [doi]

Ultra-shallow n:::+:::p junction formed by PH::3:: and AsH::3:: plasma immersion ion implantationB. L. Yang, N. W. Cheung, S. Denholm, J. Shao, H. Wong, P. T. Lai, Y. C. Cheng. mr, 42(12):1985-1989, 2002. [doi]

1994

A closed-form delay expression for digital BiCMOS circuits with high-injection effectsP. T. Lai, Y. C. Cheng. jssc, 29(5):640-643, May 1994. [doi]

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1994

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