A study on the electrical characteristics of InGaZnO thin-film transistor with HfLaO gate dielectric annealed in different gases

L. X. Qian, P. T. Lai. A study on the electrical characteristics of InGaZnO thin-film transistor with HfLaO gate dielectric annealed in different gases. Microelectronics Reliability, 54(11):2396-2400, 2014. [doi]

Abstract

Abstract is missing.