Ultra-shallow n:::+:::p junction formed by PH::3:: and AsH::3:: plasma immersion ion implantation

B. L. Yang, N. W. Cheung, S. Denholm, J. Shao, H. Wong, P. T. Lai, Y. C. Cheng. Ultra-shallow n:::+:::p junction formed by PH::3:: and AsH::3:: plasma immersion ion implantation. Microelectronics Reliability, 42(12):1985-1989, 2002. [doi]

Abstract

Abstract is missing.