A fringing-capacitance model for deep-submicron MOSFET with high-k gate dielectric

F. Ji, J. P. Xu, P. T. Lai, J. G. Guan. A fringing-capacitance model for deep-submicron MOSFET with high-k gate dielectric. Microelectronics Reliability, 48(5):693-697, 2008. [doi]

Abstract

Abstract is missing.