Ru Huang, Jinyan Wang, Jin He, Min Yu, Xing Zhang, Yangyuan Wang. Hot carrier degradation behavior in SOI dynamic-threshold-voltage nMOSFET s (n-DTMOSFET) measured by gated-diode configuration. Microelectronics Reliability, 43(5):707-711, 2003. [doi]
@article{HuangWHYZW03,
title = {Hot carrier degradation behavior in SOI dynamic-threshold-voltage nMOSFET s (n-DTMOSFET) measured by gated-diode configuration},
author = {Ru Huang and Jinyan Wang and Jin He and Min Yu and Xing Zhang and Yangyuan Wang},
year = {2003},
doi = {10.1016/S0026-2714(03)00038-6},
url = {http://dx.doi.org/10.1016/S0026-2714(03)00038-6},
researchr = {https://researchr.org/publication/HuangWHYZW03},
cites = {0},
citedby = {0},
journal = {Microelectronics Reliability},
volume = {43},
number = {5},
pages = {707-711},
}