Quentin Hubert, Carine Jahan, Alain Toffoli, Gabriele Navarro, S. Chandrashekar, P. Noe, V. Sousa, L. Perniola, J.-F. Nodin, A. Persico, S. Maitrejean, A. Roule, E. Henaff, M. Tessaire, P. Zuliani, R. Annunziata, Gilles Reimbold, G. Pananakakis, B. De Salvo. Carbon-doped Ge2Sb2Te5 phase-change memory devices featuring reduced RESET current and power consumption. In Proceedings of the 2012 European Solid-State Device Research Conference, ESSDERC 2012, Bordeaux, France, September 17-21, 2012. pages 286-289, IEEE, 2012. [doi]
@inproceedings{HubertJTNCNSPNPMRHTZARPS12,
title = {Carbon-doped Ge2Sb2Te5 phase-change memory devices featuring reduced RESET current and power consumption},
author = {Quentin Hubert and Carine Jahan and Alain Toffoli and Gabriele Navarro and S. Chandrashekar and P. Noe and V. Sousa and L. Perniola and J.-F. Nodin and A. Persico and S. Maitrejean and A. Roule and E. Henaff and M. Tessaire and P. Zuliani and R. Annunziata and Gilles Reimbold and G. Pananakakis and B. De Salvo},
year = {2012},
doi = {10.1109/ESSDERC.2012.6343389},
url = {http://dx.doi.org/10.1109/ESSDERC.2012.6343389},
researchr = {https://researchr.org/publication/HubertJTNCNSPNPMRHTZARPS12},
cites = {0},
citedby = {0},
pages = {286-289},
booktitle = {Proceedings of the 2012 European Solid-State Device Research Conference, ESSDERC 2012, Bordeaux, France, September 17-21, 2012},
publisher = {IEEE},
isbn = {978-1-4673-1707-8},
}