Richard Hudeczek, Peter Baumgartner 0005. Mechanical Band Gap Formation in Anisotropic CMOS Back-End-of-Line Stacks for Monolithic High-Q MEMS Resonator Confinement. In 51st IEEE European Solid-State Device Research Conference, ESSDERC 2021, Grenoble, France, September 13-22, 2021. pages 211-214, IEEE, 2021. [doi]
@inproceedings{HudeczekB21,
title = {Mechanical Band Gap Formation in Anisotropic CMOS Back-End-of-Line Stacks for Monolithic High-Q MEMS Resonator Confinement},
author = {Richard Hudeczek and Peter Baumgartner 0005},
year = {2021},
doi = {10.1109/ESSDERC53440.2021.9631769},
url = {https://doi.org/10.1109/ESSDERC53440.2021.9631769},
researchr = {https://researchr.org/publication/HudeczekB21},
cites = {0},
citedby = {0},
pages = {211-214},
booktitle = {51st IEEE European Solid-State Device Research Conference, ESSDERC 2021, Grenoble, France, September 13-22, 2021},
publisher = {IEEE},
isbn = {978-1-6654-3748-6},
}