Abstract is missing.
- Artificial Intelligence: Why moving it to the Edge?Joël Hartmann, Paolo Cappelletti, Nitin Chawla, Franck Arnaud, Andreia Cathelin. 1-6 [doi]
- Overcoming the Data Deluge Challenges with Greener ElectronicsJean-René Léquepeys, Marc Duranton, S. Bonnetier, S. Catrou, R. Fournel, T. Ernst, L. Hérault, D. Louis, A. Jerraya, Alexandre Valentian, F. Perruchot, Thomas Signamarcheix, Elisa Vianello, Carlo Reita. 7-14 [doi]
- Architecting the Human IntranetJan M. Rabaey, Ana Claudia Arias, Rikky Muller. 15-20 [doi]
- Compute-in-Memory: From Device Innovation to 3D System IntegrationShimeng Yu, Wonbo Shim, Jae Hur, Yuan-Chun Luo, Gihun Choe, Wantong Li, Anni Lu, Xiaochen Peng. 21-28 [doi]
- Transistors for 100-300GHz WirelessMark J. W. Rodwell, Brian Markman, Yihao Fang, Logan Whitaker, Hsin-Ying Tseng, Ahmed S. H. Ahmed. 29-34 [doi]
- The essential contribution of CMOS imaging technologies to Earth Observation applicationsPierre Magnan. 35-42 [doi]
- Compact Modelling of 22nm FDSOI CMOS Semiconductor Quantum Dot Cryogenic I-V CharacteristicsS. Pati Tripathi, S. Bonen, C. Nastase, S. Iordanescu, G. Boldeiu, M. Pasteanu, A. Müller, S. P. Voinigescu. 43-46 [doi]
- Bias Generation and Calibration of CMOS Charge Qubits at 3.5 Kelvin in 22-nm FDSOIImran Bashir, Dirk Leipold, Mike Asker, Ali Esmailiyan, Elena Blokhina, David Redmond, Panagiotis Giounanlis, Dennis Andrade-Miceli, Robert Bogdan Staszewski. 47-50 [doi]
- Electronic-Photonic Cryogenic Egress LinkBozhi Yin, Hayk Gevorgyan, Deniz Onural, Anatol Khilo, Milos A. Popovic, Vladimir Marko Stojanovic. 51-54 [doi]
- Performance Trade-Off Scenarios for GAA Nanosheet FETs Considering Inner-spacers and Epi-induced Stress: Understanding & Mitigating Process RisksAmita Rawat, Krishna K. Bhuwalka, Philippe Matagne, Bjorn Vermeersch, Hao Wu, Geert Hellings, Julien Ryckaert, Changze Liu. 55-58 [doi]
- Electric-field controlled spin transport in bilayer CrI3Damiano Marian, David Soriano, Enrique G. Marin, Giuseppe Iannaccone, Gianluca Fiori. 59-62 [doi]
- Circuit Model for the Efficient Co-Simulation of Spin Qubits and their Control & Readout CircuitryB. Gys, Fahd A. Mohiyaddin, Rohith Acharya, R. Li, Kristiaan De Greve, Georges G. E. Gielen, Bogdan Govoreanu, Iuliana P. Radu, Francky Catthoor. 63-66 [doi]
- Cryogenic Characterization and Modeling of 14 nm Bulk FinFET TechnologyAsma Chabane, Mridula Prathapan, Peter Mueller, Eunjung Cha, Pier Andrea Francese, Marcel A. Kossel, Thomas Morf, Cezar B. Zota. 67-70 [doi]
- Cryogenic Characterization of 16 nm FinFET Technology for Quantum ComputingHung-Chi Han, Farzan Jazaeri, Antonio A. D'Amico, Andrea Baschirotto, Edoardo Charbon, Christian C. Enz. 71-74 [doi]
- A Maximally Row-Parallel MRAM In-Memory-Computing Macro Addressing Readout Circuit Sensitivity and AreaPeter Deaville, Bonan Zhang, Lung-Yen Chen, Naveen Verma. 75-78 [doi]
- A 40nm RRAM Compute-in-Memory Macro Featuring On-Chip Write-Verify and Offset-Cancelling ADC ReferencesWantong Li, Xiaoyu Sun, Hongwu Jiang, Shanshi Huang, Shimeng Yu. 79-82 [doi]
- Low-Overhead Implementation of Binarized Neural Networks Employing Robust 2T2R Resistive RAM BridgesM. Ezzadeen, Atreya Majumdar, Marc Bocquet, Bastien Giraud, Jean-Philippe Noël, François Andrieu, Damien Querlioz, Jean Michel Portal. 83-86 [doi]
- High-Conductance, Ohmic-like HfZrO4 Ferroelectric MemristorLaura Bégon-Lours, Mattia Halter, Youri Popoff, Zhenming Yu, Donato Francesco Falcone, Bert Jan Offrein. 87-90 [doi]
- Emulating artificial mechanoreceptor functionalities from SiO2-based memristor and PDMS stretchable sensor for artificial skin applicationsPanagiotis Bousoulas, Ch. Papakonstantinopoulos, Dimitris Tsoukalas. 91-94 [doi]
- A 2.1 pJ/SOP 40nm SNN Accelerator Featuring On-chip Transfer Learning using Delta STDPMing Ming Wong, S. B. Shrestha, Vishnu P. Nambiar, Aarthy Mani, Yun Kwan Lee, Eng-Kiat Koh, W. Jiang, K. T. C. Chai, Anh-Tuan Do. 95-98 [doi]
- AAD-KWS: a sub-$\mu\mathrm{W}$ keyword spotting chip with a zero-cost, acoustic activity detector from a 170nW MFCC feature extractor in 28nm CMOSLixuan Zhu, Weiwei Shan, Jiaming Xu, Yicheng Lu. 99-102 [doi]
- 7.5nJ/inference CMOS Echo State Network for Coronary Heart Disease predictionSanjeev Tannirkulam Chandrasekaran, Imon Banerjee, Arindam Sanyal. 103-106 [doi]
- A 1.625 TOPS/W SOC for Deep CNN Training and Inference in 28nm CMOSYu-Tung Liu, Chuking Kung, Ming-Hang Hsieh, Hsiu-Wen Wang, Chun-Pin Lin, Chao-Yang Yu, Chi-Shi Chen, Tzi-Dar Chiueh. 107-110 [doi]
- A 43pJ per Inference CBNN-based Compute-in-sensor Associative Memory in 28nm FDSOIBenoit Larras, Antoine Frappé. 111-114 [doi]
- A Calibration-Free In-Memory True Random Number Generator Using Voltage-Controlled MRAMJiyue Yang, Di Wu 0045, Albert Lee, Seyed Armin Razavi, Puneet Gupta 0001, Kang L. Wang, Sudhakar Pamarti. 115-118 [doi]
- Exploiting FeFET Switching Stochasticity for Low-Power Reconfigurable Physical Unclonable FunctionXinrui Guo, Xiaoyang Ma, Franz Müller 0001, Ricardo Olivo, Juejian Wu, Kai Ni 0004, Thomas Kämpfe, Yongpan Liu, Huazhong Yang, Xueqing Li. 119-122 [doi]
- A Charge-Domain Computation-In-Memory Macro with Versatile All-Around-Wire-Capacitor for Variable-Precision Computation and Array-Embedded DA/AD ConversionsGicheol Shin, Donguk Seo, Jaerok Kim, Johnny Rhe, Eunyoung Lee, Seonho Kim, Soyoun Jeong, Jong Hwan Ko, Yoonmyung Lee. 123-126 [doi]
- 2 and 749-1, 459 TOPS/W in 28nmViveka Konandur Rajanna, Sachin Taneja, Massimo Alioto. 127-130 [doi]
- A Zero-Skipping Reconfigurable SRAM In-Memory Computing Macro with Binary-Searching ADCChengshuo Yu, Kevin Tshun Chuan Chai, Tony Tae-Hyoung Kim, Bongjin Kim. 131-134 [doi]
- $4.6\mu \mathrm{m}$ Low Power Indirect Time-of-Flight Pixel Achieving 88.5% Demodulation Contrast at 200MHz for 0.54MPix Depth CameraCédric Tubert, Pascal Mellot, Yann Desprez, Celine Mas, Arnaud Authié, Laurent Simony, Grégory Bochet, Stephane Drouard, Jeremie Teyssier, Damien Miclo, Jean-Raphael Bezal, Thibault Augey, Franck Hingant, Thomas Bouchet, Blandine Roig, Aurélien Mazard, Raoul Vergara, Gabriel Mugny, Arnaud Tournier, Frédéric Lalanne, François Roy, Boris Rodrigues Goncalves, Matteo Vignetti, Pascal Fonteneau, Vincent Farys, François Agut, Joao Miguel Melo Santos, David Hadden, Kevin Channon, Christopher Townsend, Bruce Rae, Sara Pellegrini. 135-138 [doi]
- Advancements in indirect Time of Flight image sensors in front side illuminated CMOSMarkus Dielacher, Martin Flatscher, Reinhard Gabl, Richard Gaggl, Dirk Offenberg, Jens Prima. 139-142 [doi]
- Dark Count Rate in Single-Photon Avalanche Diodes: Characterization and Modeling studyMathieu Sicre, Megan Agnew, Christel Buj, Jean Coignus, Dominique Golanski, Rémi Helleboid, Bastien Mamdy, Isobel Nicholson, Sara Pellegrini, Denis Rideau, David Roy 0001, Francis Calmon. 143-146 [doi]
- A high-speed low-power sun sensor with solar cells and continuous operationRuben Gomez-Merchan, M. López-Carmona, Juan A. Leñero-Bardallo, Ángel Rodríguez-Vázquez. 147-150 [doi]
- A 0. 94-\mu \mathrm{V}_{\text{rms}}$ Input Noise Pixel-Level Continuous Time $\Sigma\Delta$ IADC Interface for THz SensingGabriele Quarta, Matteo Perenzoni, Stefano D'Amico. 151-154 [doi]
- An Energy Autonomous Light Intensity Sensor for Monarch Butterfly Migration TrackingYuyang Li, Yejoong Kim, Eunseong Moon, Yuxin Gao, Jamie Phillips, Inhee Lee. 155-158 [doi]
- 2f Power ConsumptionJonas Pelgrims, Kris Myny, Wim Dehaene. 159-162 [doi]
- A Pitch-Matched Analog Front-End with Continuous Time-Gain Compensation for High-Density Ultrasound Transducer ArraysP. Guo, Zu-yao Chang, Emile Noothout, Hendrik J. Vos, Johan G. Bosch, Nico de Jong, Martin D. Verweij, Michiel A. P. Pertijs. 163-166 [doi]
- A 96-channel 40nm CMOS Fully-Integrated Potentiostat for Electrochemical MonitoringPeishuo Li, Tom R. Molderez, Marian Verhelst. 167-170 [doi]
- 2 0.31 V/0.39 V 28 nW/144 nW 65 nm CMOS Solar Cell-Powered Biofuel Cell-Input Biosensing System with PIM/PDM LED Driving for Stand-Alone RF-Less Continuous Glucose Monitoring Contact LensGuowei Chen, XinYang Yu, Yue Wang, Tran Minh Quan, Naofumi Matsuyama, Takuya Tsujimura, Md. Zahidul Islam, Kiichi Niitsu. 171-174 [doi]
- Wafer-scale fabrication of biologically sensitive Si nanowire FET: from pH sensing to electrical detection of DNA hybridizationR. Midahuen, Bernard Previtali, C. Fontelaye, G. Nonglaton, V. Stambouli, Sylvain Barraud. 175-178 [doi]
- Design and Fabrication of a Ring-Coupled Mach-Zehnder Interferometer GyroscopeEva Kempf, Pierre Labeye, Philippe Grosse, Frédéric Boeuf, Stéphane Monfray, Paul G. Charette, Régis Orobtchouk. 179-182 [doi]
- High Tuning Range Spiking 1R-1T VO2 Voltage-Controlled Oscillator for Integrated RF and Optical SensingTeodor Rosca, Fatemeh Qaderi, Adrian Mihai Ionescu. 183-186 [doi]
- High-Temperature Characterization of Novel Silicon-Based Substrate Solutions for RF-IC ApplicationsQ. Courte, M. Rack, M. Nabet, Pieter Cardinael, Jean-Pierre Raskin. 187-190 [doi]
- Dual-Layer Proton Irradiation for Creating Thermally-Stable High-Resistivity Region in Si CMOS SubstrateHans Herdian, Takeshi Inoue, Takuichi Hirano, Masatsugu Sogabe, Atsushi Shirane, Kenichi Okada. 191-194 [doi]
- Impact of Device Shunt Loss on DC-80 GHz SPDT in 22 nm FD-SOIMartin Rack, Lucas Nyssens, Quentin Courte, Dimitri Lederer, Jean-Pierre Raskin. 195-198 [doi]
- Novel mmWave NMOS Device for High Pout mmWave Power Amplifiers in 45RFSOISameer H. Jain, Dimitri Lederer, Arvind Kumar, Sudesh Saroop, Chris Prindle, P. Srinivasan 0002, Wen Liu, Ravi Achanta, Erdem Kaltalioglu, Stephen Moss, Greg Freeman, Paul Colestock. 199-202 [doi]
- Nanoscale InGaAs FinFETs: Band-to-Band Tunneling and Ballistic TransportJesús A. del Alamo, Xiaowei Cai, Xin Zhao, Alon Vardi, Jesús Grajal. 203-206 [doi]
- Model of Substrate Capacitance of MOSFET RF Switch Inspired by Inverted Microstrip LineValentyn Solomko, Oguzhan Oezdamar, Robert Weigel, Amelie Hagelauer. 207-210 [doi]
- Mechanical Band Gap Formation in Anisotropic CMOS Back-End-of-Line Stacks for Monolithic High-Q MEMS Resonator ConfinementRichard Hudeczek, Peter Baumgartner 0005. 211-214 [doi]
- Operation and Design of Ferroelectric FETs for a BEOL Compatible Device ImplementationDaniel Lizzit, David Esseni. 215-218 [doi]
- Complementary Two-Dimensional (2-D) MoS2 FET TechnologyCristine Jin Estrada, Zichao Ma, Mansun Chan. 219-222 [doi]
- Experimental Assessment of Variability in Junctionless Nanowire nMOS TransistorsMichelly de Souza, Sylvain Barraud, Mikaël Cassé, Maud Vinet, Olivier Faynot, Marcelo Antonio Pavanello. 223-226 [doi]
- Improvement on Ge/GeOx/Tm2O3/HfO2 Gate Performance by Forming Gas AnnealLaura Zurauskaite, Mikael Östling, Per-Erik Hellström. 227-230 [doi]
- Improving Ge-rich GST ePCM reliability through BEOL engineeringAndrea Redaelli, Anna Gandolfo, G. Samanni, E. Gomiero, E. Petroni, Luca Scotti, A. Lippiello, Paolo Mattavelli, J. Jasse, D. Codegoni, A. Serafini, Rossella Ranica, C. Boccaccio, J. Sandrini, R. Berthelon, J. C. Grenier, Olivier Weber, David Turgis, A. Valery, S. Del Medico, V. Caubet, J. P. Reynard, Didier Dutartre, L. Favennec, A. Conte, Fabio Disegni, M. De Tomasi, A. Ventre, M. Baldo, Daniele Ielmini, Alfonso Maurelli, P. Ferreira, Franck Arnaud, F. Piazza, Paolo Cappelletti, R. Annunziata, R. Gonella. 231-234 [doi]
- Multiscale Modeling Study of Native Oxide Growth on a Si(100) SurfaceL. Cvitkovich, Markus Jech, D. Waldhör, Al-Moatasem El-Sayed, C. Wilhelmer, Tibor Grasser. 235-238 [doi]
- Machine Learning Prediction of Defect Structures in Amorphous Silicon DioxideDiego Milardovich, Markus Jech, Dominic Waldhoer, Al-Moatasem Bellah El-Sayed, Tibor Grasser. 239-242 [doi]
- Statistical Ab Initio Analysis of Electron Trapping Oxide Defects in the Si/SiO2 NetworkChristoph Wilhelmer, Markus Jech, Dominic Waldhoer, Al-Moatasem Bellah El-Sayed, Lukas Cvitkovich, Tibor Grasser. 243-246 [doi]
- VERILOR: A Verilog-A Model of Lorentzian Spectra for Simulating Trap-related Noise in CMOS CircuitsAngeliki Tataridou, Gérard Ghibaudo, Christoforos G. Theodorou. 247-250 [doi]
- Impact of Hot Carrier Degradation on the Performances of Current Mirrors based on a 55 nm BiCMOS Integrated Circuit TechnologyC. Mukherjee 0001, Marine Couret, Cristell Maneux, Didier Céli. 251-254 [doi]
- Polarization switching and interface charges in BEOL compatible Ferroelectric Tunnel JunctionsRiccardo Fontanini, Justine Barbot, M. Segatto, Suzanne Lancaster, Quang T. Duong, Francesco Driussi, Laurent Grenouillet, Francois Triozon, Jean Coignus, Thomas Mikolajick, Stefan Slesazeck, David Esseni. 255-258 [doi]
- Fast Behavioral VerilogA Compact Model for Stochastic MTJEtienne Becle, Philippe Talatchian, Guillaume Prenat, Lorena Anghel, Ioan Lucian Prejbeanu. 259-262 [doi]
- A Fokker-Planck Solver to Model MTJ StochasticityFernando García-Redondo, Pranay Prabhat, Mudit Bhargava. 263-266 [doi]
- x alloys accounting for strain and temperatureJérémy Grebot, Gabriel Mugny, Rémi Helleboid, Isobel Nicholson, Francesco Abbate, Denis Rideau, Hélène Wehbe-Alause, Claire Scheid, Stéphane Lanteri. 267-270 [doi]
- Comprehensive modeling and characterization of Photon Detection Efficiency and Jitter in advanced SPAD devicesRémi Helleboid, Denis Rideau, Isobel Nicholson, Norbert Moussy, Olivier Saxod, Marie Basset, Jérémy Grebot, Antonin Zimmerman, Bastien Mamdy, Dominique Golanski, Megan Agnew, Sara Pellegrini, Mathieu Sicre. 271-274 [doi]
- Enhanced data integrity of In-Ga-Zn-Oxide based Capacitor-less 2T memory for DRAM applicationsHyungrock Oh, Attilio Belmonte, Manu Perumkunnil, Jérôme Mitard, Nouredine Rassoul, Gabriele Luca Donadio, Romain Delhougne, Arnaud Furnémont, Gouri Sankar Kar, Wim Dehaene. 275-278 [doi]
- Vertical and lateral charge losses during short time retention in 3-D NAND flash memoryYongwoo Lee, Jinsu Yoon, Kwangmin Lim, Bongsik Choi, Geon-Hwi Park, Ju Won Jeon, Jong-Ho Bae, Dong Myong Kim, Dae-Hwan Kim, Eunmee Kwon, Sung Jin Choi. 279-282 [doi]
- Layout-Based Evaluation of Read/Write Performance of SOT-MRAM and SOTFET-RAMOlalekan Afuye, Shady Agwa, Christopher Batten, Alyssa B. Apsel. 283-286 [doi]
- Scaling ferroelectric HZO thickness for low power Ge MFS-FTJ memoriesNikitas Siannas, Christina Zacharaki, Polychronis Tsipas, Stefanos Chaitoglou, Laura Bégon-Lours, Athanasios Dimoulas. 287-290 [doi]
- 4-Terminal Ferroelectric Schottky Barrier Field Effect Transistors as Artificial SynapsesFengben Xi, Yi Han, Andreas T. Tiedemann, Detlev Grützmacher, Qing-Tai Zhao. 291-294 [doi]
- Reliable method for low field temperature dependent mobility extraction at Al2O3/GaN interfaceB. Rrustemi, Aby-Gaël Viey, Marie-Anne Jaud, Francois Triozon, William Vandendaele, Charles Leroux, Jacques Cluzel, S. Martin, C. Le Royer, Romain Gwoziecki, Roberto Modica, Ferdinando Iucolano, Fred Gaillard, Thierry Poiroux, Gérard Ghibaudo. 295-298 [doi]
- Parasitic Capacitance Analysis in Short Channel GaN MIS-HEMTsR. Kom Kammeugne, C. Leroux, Tadeu Mota Frutuoso, Jacques Cluzel, L. Vauche, Cyrille Le Royer, Romain Gwoziecki, Xavier Garros, Fred Gaillard, Matthew Charles, E. Bano, Gérard Ghibaudo. 299-302 [doi]
- Impact of III-N buffer layers on RF losses and harmonic distortion of GaN-on-Si SubstratesPieter Cardinael, Sachin Yadav, Ming Zhao, M. Rack, Dimitri Lederer, Nadine Collaert, Bertrand Parvais, Jean-Pierre Raskin. 303-306 [doi]
- Integration and Reliability Aspects of Low-Temperature and Au-free Ta/Al-based Ohmic Contacts for AlGaN/GaN MIS-HEMTsAnthony Calzolaro, Thomas Mikolajick, Andre Wachowiak. 307-310 [doi]