Enhanced data integrity of In-Ga-Zn-Oxide based Capacitor-less 2T memory for DRAM applications

Hyungrock Oh, Attilio Belmonte, Manu Perumkunnil, Jérôme Mitard, Nouredine Rassoul, Gabriele Luca Donadio, Romain Delhougne, Arnaud Furnémont, Gouri Sankar Kar, Wim Dehaene. Enhanced data integrity of In-Ga-Zn-Oxide based Capacitor-less 2T memory for DRAM applications. In 51st IEEE European Solid-State Device Research Conference, ESSDERC 2021, Grenoble, France, September 13-22, 2021. pages 275-278, IEEE, 2021. [doi]

Abstract

Abstract is missing.