4-Terminal Ferroelectric Schottky Barrier Field Effect Transistors as Artificial Synapses

Fengben Xi, Yi Han, Andreas T. Tiedemann, Detlev Grützmacher, Qing-Tai Zhao. 4-Terminal Ferroelectric Schottky Barrier Field Effect Transistors as Artificial Synapses. In 51st IEEE European Solid-State Device Research Conference, ESSDERC 2021, Grenoble, France, September 13-22, 2021. pages 291-294, IEEE, 2021. [doi]

Abstract

Abstract is missing.