A 0.4µA Offset, 6ns Sensing-time Multi-level Sense Amplifier for Resistive Non-Volatile Memories in 65nm LSTP Technology - researchr publication authors

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Feraj Husain, Belal Iqbal, Anuj Grover. A 0.4µA Offset, 6ns Sensing-time Multi-level Sense Amplifier for Resistive Non-Volatile Memories in 65nm LSTP Technology. In 34th International Conference on VLSI Design and 20th International Conference on Embedded Systems, VLSID 2021, Guwahati, India, February 20-24, 2021. pages 76-81, IEEE, 2021. [doi]

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