Statistical simulations of 6T-SRAM cell ageing using a reliability aware simulation flow

Razaidi Hussin, Louis Gerrer, Jie Ding, Liping Wang, Salvatore M. Amoroso, Binjie Cheng, Dave Reid, Pieter Weckx, Marco Simicic, Jacopo Franco, Annelies Vanderheyden, Danielle Vanhaeren, Naoto Horiguchi, Ben Kaczer, Asen Asenov. Statistical simulations of 6T-SRAM cell ageing using a reliability aware simulation flow. In 45th European Solid State Device Research Conference, ESSDERC 2015, Graz, Austria, September 14-18, 2015. pages 238-241, IEEE, 2015. [doi]

@inproceedings{HussinGDWACRWSF15,
  title = {Statistical simulations of 6T-SRAM cell ageing using a reliability aware simulation flow},
  author = {Razaidi Hussin and Louis Gerrer and Jie Ding and Liping Wang and Salvatore M. Amoroso and Binjie Cheng and Dave Reid and Pieter Weckx and Marco Simicic and Jacopo Franco and Annelies Vanderheyden and Danielle Vanhaeren and Naoto Horiguchi and Ben Kaczer and Asen Asenov},
  year = {2015},
  doi = {10.1109/ESSDERC.2015.7324758},
  url = {http://dx.doi.org/10.1109/ESSDERC.2015.7324758},
  researchr = {https://researchr.org/publication/HussinGDWACRWSF15},
  cites = {0},
  citedby = {0},
  pages = {238-241},
  booktitle = {45th European Solid State Device Research Conference, ESSDERC 2015, Graz, Austria, September 14-18, 2015},
  publisher = {IEEE},
  isbn = {978-1-4673-7135-3},
}