Si MOS technology for spin-based quantum computing

L. Hutin, B. Bertrand, R. Maurand, A. Crippa, M. Urdampilleta, Y.-J. Kim, A. Amisse, H. Bohuslavskyi, L. Bourdet, Sylvain Barraud, X. Jeh, Yann-Michel Niquet, Marc Sanquer, C. Bauerle, T. Meunier, S. De Franceschi, Maud Vinet. Si MOS technology for spin-based quantum computing. In 48th European Solid-State Device Research Conference, ESSDERC 2018, Dresden, Germany, September 3-6, 2018. pages 12-17, IEEE, 2018. [doi]

@inproceedings{HutinBMCUKABBBJ18,
  title = {Si MOS technology for spin-based quantum computing},
  author = {L. Hutin and B. Bertrand and R. Maurand and A. Crippa and M. Urdampilleta and Y.-J. Kim and A. Amisse and H. Bohuslavskyi and L. Bourdet and Sylvain Barraud and X. Jeh and Yann-Michel Niquet and Marc Sanquer and C. Bauerle and T. Meunier and S. De Franceschi and Maud Vinet},
  year = {2018},
  doi = {10.1109/ESSDERC.2018.8486863},
  url = {https://doi.org/10.1109/ESSDERC.2018.8486863},
  researchr = {https://researchr.org/publication/HutinBMCUKABBBJ18},
  cites = {0},
  citedby = {0},
  pages = {12-17},
  booktitle = {48th European Solid-State Device Research Conference, ESSDERC 2018, Dresden, Germany, September 3-6, 2018},
  publisher = {IEEE},
  isbn = {978-1-5386-5401-9},
}