A. Ibrahim, J. P. Ousten, Richard Lallemand, Zoubir Khatir. Power cycling issues and challenges of SiC-MOSFET power modules in high temperature conditions. Microelectronics Reliability, 58:204-210, 2016. [doi]
@article{IbrahimOLK16,
title = {Power cycling issues and challenges of SiC-MOSFET power modules in high temperature conditions},
author = {A. Ibrahim and J. P. Ousten and Richard Lallemand and Zoubir Khatir},
year = {2016},
doi = {10.1016/j.microrel.2015.11.030},
url = {http://dx.doi.org/10.1016/j.microrel.2015.11.030},
researchr = {https://researchr.org/publication/IbrahimOLK16},
cites = {0},
citedby = {0},
journal = {Microelectronics Reliability},
volume = {58},
pages = {204-210},
}