10T Differential-Signal SRAM Design in a L4-NM FinFET Technology for High-Speed Application

Motoi Ichihashi, Youngtag Wood, Muhammed Ahosan Ul Karim, Vivek Joshi, David Burnett. 10T Differential-Signal SRAM Design in a L4-NM FinFET Technology for High-Speed Application. In 31st IEEE International System-on-Chip Conference, SOCC 2018, Arlington, VA, USA, September 4-7, 2018. pages 322-325, IEEE, 2018. [doi]

@inproceedings{IchihashiWKJB18,
  title = {10T Differential-Signal SRAM Design in a L4-NM FinFET Technology for High-Speed Application},
  author = {Motoi Ichihashi and Youngtag Wood and Muhammed Ahosan Ul Karim and Vivek Joshi and David Burnett},
  year = {2018},
  doi = {10.1109/SOCC.2018.8618548},
  url = {https://doi.org/10.1109/SOCC.2018.8618548},
  researchr = {https://researchr.org/publication/IchihashiWKJB18},
  cites = {0},
  citedby = {0},
  pages = {322-325},
  booktitle = {31st IEEE International System-on-Chip Conference, SOCC 2018, Arlington, VA, USA, September 4-7, 2018},
  publisher = {IEEE},
  isbn = {978-1-5386-1491-4},
}