Reliability of next-generation field-effect transistors with transition metal dichalcogenides - researchr publication authors

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Yury Yu. Illarionov, A. J. Molina-Mendoza, Michael Waltl, Theresia Knobloch, Marco M. Furchi, T. Mueller, Tibor Grasser. Reliability of next-generation field-effect transistors with transition metal dichalcogenides. In IEEE International Reliability Physics Symposium, IRPS 2018, Burlingame, CA, USA, March 11-15, 2018. pages 5, IEEE, 2018. [doi]

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