Yury Illarionov, Michael Waltl, Anderson D. Smith, Sam Vaziri, Mikael Östling, T. Mueller, Max C. Lemme, Tibor Grasser. Hot-carrier degradation in single-layer double-gated graphene field-effect transistors. In IEEE International Reliability Physics Symposium, IRPS 2015, Monterey, CA, USA, April 19-23, 2015. pages 2, IEEE, 2015. [doi]
@inproceedings{IllarionovWSVOM15,
title = {Hot-carrier degradation in single-layer double-gated graphene field-effect transistors},
author = {Yury Illarionov and Michael Waltl and Anderson D. Smith and Sam Vaziri and Mikael Östling and T. Mueller and Max C. Lemme and Tibor Grasser},
year = {2015},
doi = {10.1109/IRPS.2015.7112834},
url = {http://dx.doi.org/10.1109/IRPS.2015.7112834},
researchr = {https://researchr.org/publication/IllarionovWSVOM15},
cites = {0},
citedby = {0},
pages = {2},
booktitle = {IEEE International Reliability Physics Symposium, IRPS 2015, Monterey, CA, USA, April 19-23, 2015},
publisher = {IEEE},
isbn = {978-1-4673-7362-3},
}