Hot-carrier degradation in single-layer double-gated graphene field-effect transistors

Yury Illarionov, Michael Waltl, Anderson D. Smith, Sam Vaziri, Mikael Östling, T. Mueller, Max C. Lemme, Tibor Grasser. Hot-carrier degradation in single-layer double-gated graphene field-effect transistors. In IEEE International Reliability Physics Symposium, IRPS 2015, Monterey, CA, USA, April 19-23, 2015. pages 2, IEEE, 2015. [doi]

Abstract

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