Evaluation of 1/f Noise Characteristics in High-k/Metal Gate and SiON/Poly-Si Gate MOSFET with 65 nm CMOS Process

Takuya Imamoto, Takeshi Sasaki, Tetsuo Endoh. Evaluation of 1/f Noise Characteristics in High-k/Metal Gate and SiON/Poly-Si Gate MOSFET with 65 nm CMOS Process. IEICE Transactions, 94-C(5):724-729, 2011. [doi]

Abstract

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