Fernanda Irrera. Electrical degradation and recovery of dielectrics in n:::++:::-poly-Si/SiO::x::/SiO::2::/p-sub structures designed for application in low-voltage non-volatile memories. Microelectronics Reliability, 41(11):1809-1813, 2001. [doi]
@article{Irrera01,
title = {Electrical degradation and recovery of dielectrics in n:::++:::-poly-Si/SiO::x::/SiO::2::/p-sub structures designed for application in low-voltage non-volatile memories},
author = {Fernanda Irrera},
year = {2001},
doi = {10.1016/S0026-2714(01)00094-4},
url = {http://dx.doi.org/10.1016/S0026-2714(01)00094-4},
researchr = {https://researchr.org/publication/Irrera01},
cites = {0},
citedby = {0},
journal = {Microelectronics Reliability},
volume = {41},
number = {11},
pages = {1809-1813},
}