Tomoyuki Ishii, Taro Osabe, Toshiyuki Mine, Toshiaki Sano, Bryan Atwood, Norifumi Kameshiro, Takao Watanabe, Kazuo Yano. SESO memory: A 3T gain cell solution using ultra thin silicon film for dense and low power embedded memories. In Proceedings of the IEEE 2004 Custom Integrated Circuits Conference, CICC 2004, Orlando, FL, USA, October 2004. pages 457-463, IEEE, 2004. [doi]
@inproceedings{IshiiOMSAKWY04,
title = {SESO memory: A 3T gain cell solution using ultra thin silicon film for dense and low power embedded memories},
author = {Tomoyuki Ishii and Taro Osabe and Toshiyuki Mine and Toshiaki Sano and Bryan Atwood and Norifumi Kameshiro and Takao Watanabe and Kazuo Yano},
year = {2004},
doi = {10.1109/CICC.2004.1358850},
url = {https://doi.org/10.1109/CICC.2004.1358850},
researchr = {https://researchr.org/publication/IshiiOMSAKWY04},
cites = {0},
citedby = {0},
pages = {457-463},
booktitle = {Proceedings of the IEEE 2004 Custom Integrated Circuits Conference, CICC 2004, Orlando, FL, USA, October 2004},
publisher = {IEEE},
isbn = {0-7803-8495-4},
}