Lasing characteristics of GalnAsP SCH-MQW Laser Diode on Directly-bonded InP/Si Substrate

Takahiro Ishizaki, Kazuki Uchida, Hirokazu Sugiyama, Xu Han, Natsuki Hayasaka, Masaki Aikawa, Masaki Matsuura, Koki Tsushima, Takuto Shirai, Kazuhiko Shimomura. Lasing characteristics of GalnAsP SCH-MQW Laser Diode on Directly-bonded InP/Si Substrate. In 2019 24th OptoElectronics and Communications Conference (OECC) and 2019 International Conference on Photonics in Switching and Computing (PSC), Fukuoka, Japan, July 7-11, 2019. pages 1-3, IEEE, 2019. [doi]

Abstract

Abstract is missing.