Impact of Channel Thickness on the Performance of GaAs and GaSb DG-JLMOSFETs: An Atomistic Tight Binding Based Evaluation - researchr publication authors

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Muhammad Shaffatul Islam, Md. Soyaeb Hasan, Md. Rafiqul Islam 0002, Ahmed I. Iskanderani, Ibrahim Mustafa Mehedi, Md. Tanvir Hasan. Impact of Channel Thickness on the Performance of GaAs and GaSb DG-JLMOSFETs: An Atomistic Tight Binding Based Evaluation. IEEE Access, 9:117649-117659, 2021. [doi]

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