Muhammad Shaffatul Islam, Md. Soyaeb Hasan, Md. Rafiqul Islam 0002, Ahmed I. Iskanderani, Ibrahim Mustafa Mehedi, Md. Tanvir Hasan. Impact of Channel Thickness on the Performance of GaAs and GaSb DG-JLMOSFETs: An Atomistic Tight Binding Based Evaluation. IEEE Access, 9:117649-117659, 2021. [doi]
@article{IslamHIIMH21,
title = {Impact of Channel Thickness on the Performance of GaAs and GaSb DG-JLMOSFETs: An Atomistic Tight Binding Based Evaluation},
author = {Muhammad Shaffatul Islam and Md. Soyaeb Hasan and Md. Rafiqul Islam 0002 and Ahmed I. Iskanderani and Ibrahim Mustafa Mehedi and Md. Tanvir Hasan},
year = {2021},
doi = {10.1109/ACCESS.2021.3106141},
url = {https://doi.org/10.1109/ACCESS.2021.3106141},
researchr = {https://researchr.org/publication/IslamHIIMH21},
cites = {0},
citedby = {0},
journal = {IEEE Access},
volume = {9},
pages = {117649-117659},
}