Phonon-limited hole mobility in sub-20 nm-thick double-gate germanium MOSFETs

Vedran Ivanie, Mirko Poljak, Tomislav Suligoj. Phonon-limited hole mobility in sub-20 nm-thick double-gate germanium MOSFETs. In 37th International Convention on Information and Communication Technology, Electronics and Microelectronics, MIPRO 2014, Opatija, Croatia, May 26-30, 2014. pages 39-44, IEEE, 2014. [doi]

Abstract

Abstract is missing.