I. Izuddin, M. H. Kamaruddin, A. N. Nordin, N. Soin. Trench DMOS interface trap characterization by three-terminal charge pumping measurement. Microelectronics Reliability, 52(12):2914-2919, 2012. [doi]
@article{IzuddinKNS12,
title = {Trench DMOS interface trap characterization by three-terminal charge pumping measurement},
author = {I. Izuddin and M. H. Kamaruddin and A. N. Nordin and N. Soin},
year = {2012},
doi = {10.1016/j.microrel.2012.06.118},
url = {http://dx.doi.org/10.1016/j.microrel.2012.06.118},
researchr = {https://researchr.org/publication/IzuddinKNS12},
cites = {0},
citedby = {0},
journal = {Microelectronics Reliability},
volume = {52},
number = {12},
pages = {2914-2919},
}