Trench DMOS interface trap characterization by three-terminal charge pumping measurement

I. Izuddin, M. H. Kamaruddin, A. N. Nordin, N. Soin. Trench DMOS interface trap characterization by three-terminal charge pumping measurement. Microelectronics Reliability, 52(12):2914-2919, 2012. [doi]

Abstract

Abstract is missing.